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| 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. Integrated ESD protection makes the device robust. CASE OUTLINE 55QT (Common Source) ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) Gate-Source (VGS, VDS=0) Temperatures Storage Temperature Operating Case Temperature1 +65V +20V -65 to +150C +100C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL BVDSS IDSSF IGSSF VGS(TH) VDS(ON) gFS JC 1 CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Thermal Resistance TEST CONDITIONS VGS = 0V, ID = 2mA VDS = 32V, VGS = 0V VGS = 10V, VDS = 0V VDS = 10V, ID = 3mA VGS = 10V, ID = 1A VDS = 10V, ID = 1A MIN 65 TYP MAX 5 2 4 0.25 UNITS V A A V V S C/W 2 2.2 0.12 FUNCTIONAL CHARACTERISTICS @ 25C, Vds = 32V, IDQ = 250mA GPS Pd P1dB D NOTES: Common Source Power Gain Pulse Droop Output Power at 1dB Gain Compression Drain Efficiency Load Mismatch Pulse width = 32s, LTDC=2%, F=1030/1090 MHz, Pout = 110W Pulse width = 32s, LTDC=2%, F=1030/1090 MHz F = 1030 MHz, Pout = 110W F = 1090 MHz, Pout = 110W 13.5 14.5 0.5 110 dB dB W % 45 50 5:1 1. At rated output power and pulse conditions 2. Pulse Format 1: 32s, 2% Long Term Duty Factor 3. Pulsed Bias: IDQ-PULSED = 6.5mA (@ 42us ON, 1.6msec) Rev. 0 - Apr. 2007 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1011LD110B Typical Performance (1030MHz ~ 1090MHz) 1011LD110B Input/Output 140.0 120.0 18.00 20.00 19.00 1011LD110B Gain Ouput P ower (W) 100.0 80.0 60.0 40.0 20.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 Gain (dB) 17.00 16.00 15.00 14.00 13.00 12.00 1030MHz 1060MHz 1090MHz 6.0 7.0 11.00 10.00 0.0 20.0 40.0 60.0 80.0 100.0 1030MHz 1060MHz 1090MHz 120.0 140.0 Input Pow er (W ) Output Power (W ) 1011LD110B Input Return Loss 0.00 80.0% 70.0% 1011LD110B Efficiency Input Return Loss (dB) 1030MHz 1060MHz 1090MHz Effi. (% ) -5.00 60.0% 50.0% 40.0% 30.0% -10.00 -15.00 -20.00 20.0% -25.00 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 10.0% 0.0 20.0 40.0 60.0 80.0 100.0 1030MHz 1060MHz 1090MHz 120.0 140.0 Output Pow er (W ) Output Power (W ) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1011LD110B 1011LD110B Test Circuit Layout Part C01, C04, C05, C06 C07, C08 C02, C03 C18, C19 C20 C09, C13 X01 R02, R03 M01 M03 M05 M07 M09 M11 M13 M15 M17 1011LD110B Test Circuit Component Designations and Values Description Part Description 43pF Chip Capacitor (ATC 100A) C10, C14, 0.033uF Chip Capacitor C15 100pF Chip Capacitor (ATC 100A) C11 1uF 16V Tantalum Capacitor 7.5pF Chip Capacitor (ATC 100A) C12 47uF 63V Electrolytic Capacitor 4.7pF Chip Capacitor (ATC 100A) C16 470uF, 63V Electrolytic Capacitor .35-3.5pF Johanson Capacitor, C17 1000uF, 63V Electrolytic Capacitor JMC5801 1000pF Chip Capacitor L01 6 Turns, 24 AWG, IDIA 0.092 ADG419, Analog Device R01, R04 15 , 1/4W Chip Resistor 200 , 1/4W Chip Resistor R05 82.5 , 1/4W Chip Resistor 36 x 295 mils (W x L) M02 36 x 513 mils (W x L) 680 x 80 mils (W x L) M04 36 x 460 mils (W x L) 420 x 375 mils (W x L) M06 480 x 608 mils (W x L) 200 x 10 mils (W x L) M08 200 x 10 mils (W x L) 1034 x 674 mils (W x L) M10 454 x 348 mils (W x L) 220 x 100 mils (W x L) M12 80 x 452 mils (W x L) 220 x 35 mils (W x L) M14 445 x 186 mils (W x L) 80 x 125 mils (W x L) M16 36 x 125 mils (W x L) 36 x 286 mils (W x L) PCB Rogers RT6006, r=6.15, 25mils, 1oz Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1011LD110B Typical Impedance Values Input Matching Network DUT Output Matching Network ZS ZL Frequency (MHz) 1030 1060 1090 ZS ( ) 0.88 - j1.21 0.80 - j1.05 0.73 - j0.88 ZL ( ) 1.95 - j1.59 1.68 - j1.50 1.43 - j1.34 * VDS = 32V, IDQ = 250mA, Pout = 110W * Pulse Format: 32s, 2% Long Term Duty Factor Timing Diagram for Pulsed Bias 1.6ms 42us DC RF 32us 5us 5us Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1011LD110B Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. |
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